{"id":94387,"date":"2025-09-17T06:03:19","date_gmt":"2025-09-17T06:03:19","guid":{"rendered":"https:\/\/mailinvest.blog\/index.php\/2025\/09\/17\/ruh-roh-ddr5-memory-vulnerable-to-new-rowhammer-attack-the-register\/"},"modified":"2025-09-17T06:04:26","modified_gmt":"2025-09-17T06:04:26","slug":"ruh-roh-ddr5-memory-vulnerable-to-new-rowhammer-attack-the-register","status":"publish","type":"post","link":"https:\/\/mailinvest.blog\/index.php\/2025\/09\/17\/ruh-roh-ddr5-memory-vulnerable-to-new-rowhammer-attack-the-register\/","title":{"rendered":"Ruh-roh. DDR5 memory vulnerable to new Rowhammer attack \u2022 The Register"},"content":{"rendered":"

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Researchers from Google and Swiss college ETH Zurich have discovered a brand new class of Rowhammer vulnerability that would permit attackers to entry information saved in DDR5 reminiscence.<\/p>\n

As Google explains in its post<\/a> on the invention, DRAM shops knowledge as electrical costs in small \u201ccells\u201d of reminiscence. These costs leak over time, corrupting knowledge. Laptop scientists have recognized this for ages, and the controllers that handle reminiscence due to this fact periodically refresh cells to make sure reminiscence stays dependable.<\/p>\n

Infosec varieties with pleasant and\/or adversarial inclinations observed that habits and puzzled what would occur in the event that they repeatedly accessed particular rows of reminiscence cells. They realized that by \u201chammering\u201d these rows of cells with many entry requests it\u2019s doable to deprave knowledge in adjoining cells, degrade system efficiency, and even obtain privilege escalation.<\/p>\n

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